/ TCAD Simulations of State-Of-The-Art CMOS Devices at Cryogenic TemperaturesTCAD Simulations of State-Of-The-Art CMOS Devices at Cryogenic TemperaturesMaster projects/internships - Leuven | More than two weeks agoExplore the limits of advanced CMOS device simulationAs quantum computing and cryogenic electronics becomeincreasingly important, understanding the behavior of CMOS devices at cryogenictemperatures is critical. Modern CMOS technology is optimized forroom-temperature operation. However, as the demand for cryogenic applicationsgrows, there is a pressing need to study device behavior at very lowtemperatures. The electrical properties of materials and interfaces atcryogenic temperatures can deviate significantly from their room temperaturevalues, affecting device performance, reliability, and noise characteristics.Technology Computer-Aided Design (TCAD) simulations offer apowerful tool to analyse CMOS devices under cryogenic conditions. Thesesimulations enable researchers to predict the performance of advanced CMOSnodes at extremely low temperatures, offering critical insights for designingand optimizing devices specifically for cryogenic applications.This project will focus on using TCAD to simulate and studystate-of-the-art CMOS technology nodes at cryogenic temperatures, with a strongemphasis on validating physical models (band tails, carrier mobility, chargetrapping, etc.) through continuous comparison with experimental data.Project Tasks and Objectives:Analysethe impact of cryogenic conditions on key CMOS device parameters such asthreshold voltage, carrier mobility, and subthreshold slopeInvestigatethe influence of cryogenic temperatures on interface and bulk defects,leakage currents, and overall device reliabilityCollaboratewith an internationally recognized research team working on cryogenicelectronicsSetup and perform TCAD simulations of scaled CMOS devices at cryogenictemperatures using industry-standard simulation toolsDevelopand refine simulation models to account for temperature-dependent effectsin advanced technology nodesPresentfindings in a clear and professional manner to a technical audienceType of project: Combination of internship and thesisDuration: 1 academic yearRequired degree: Master of Engineering Technology, Master of Engineering Science, Master of ScienceRequired background: Electrotechnics/Electrical Engineering, Physics, Nanoscience & Nanotechnologyimec's cleanroom
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