Overview As quantum computing and cryogenic electronics become increasingly important, understanding the behavior of CMOS devices at cryogenic temperatures is critical. Modern CMOS technology is optimized for room-temperature operation. However, as the demand for cryogenic applications grows, there is a pressing need to study device behavior at very low temperatures. The electrical properties of materials and interfaces at cryogenic temperatures can deviate significantly from their room temperature values, affecting device performance, reliability, and noise characteristics. Technology Computer-Aided Design (TCAD) simulations offer a powerful tool to analyse CMOS devices under cryogenic conditions. These simulations enable researchers to predict the performance of advanced CMOS nodes at extremely low temperatures, offering critical insights for designing and optimizing devices specifically for cryogenic applications. This project will focus on using TCAD to simulate and study state-of-the-art CMOS technology nodes at cryogenic temperatures, with a strong emphasis on validating physical models (band tails, carrier mobility, charge trapping, etc.) through continuous comparison with experimental data. Project Tasks and Objectives Analyse the impact of cryogenic conditions on key CMOS device parameters such as threshold voltage, carrier mobility, and subthreshold slope Investigate the influence of cryogenic temperatures on interface and bulk defects, leakage currents, and overall device reliability Collaborate with an internationally recognized research team working on cryogenic electronics Set up and perform TCAD simulations of scaled CMOS devices at cryogenic temperatures using industry-standard simulation tools Develop and refine simulation models to