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Tcad simulations of state-of-the-art cmos devices at cryogenic temperatures

Louvain
Imec
Publiée le 12 septembre
Description de l'offre

OverviewAs quantum computing and cryogenic electronics become increasingly important, understanding the behavior of CMOS devices at cryogenic temperatures is critical. Modern CMOS technology is optimized for room-temperature operation. However, as the demand for cryogenic applications grows, there is a pressing need to study device behavior at very low temperatures. The electrical properties of materials and interfaces at cryogenic temperatures can deviate significantly from their room temperature values, affecting device performance, reliability, and noise characteristics. Technology Computer-Aided Design (TCAD) simulations offer a powerful tool to analyse CMOS devices under cryogenic conditions. These simulations enable researchers to predict the performance of advanced CMOS nodes at extremely low temperatures, offering critical insights for designing and optimizing devices specifically for cryogenic applications.This project will focus on using TCAD to simulate and study state-of-the-art CMOS technology nodes at cryogenic temperatures, with a strong emphasis on validating physical models (band tails, carrier mobility, charge trapping, etc.) through continuous comparison with experimental data.Project Tasks and ObjectivesAnalyse the impact of cryogenic conditions on key CMOS device parameters such as threshold voltage, carrier mobility, and subthreshold slopeInvestigate the influence of cryogenic temperatures on interface and bulk defects, leakage currents, and overall device reliabilityCollaborate with an internationally recognized research team working on cryogenic electronicsSet up and perform TCAD simulations of scaled CMOS devices at cryogenic temperatures using industry-standard simulation toolsDevelop and refine simulation models to account for temperature-dependent effects in advanced technology nodesPresent findings in a clear and professional manner to a technical audienceType of projectCombination of internship and thesisDuration1 academic yearRequired degreeMaster of Engineering Technology, Master of Engineering Science, Master of ScienceRequired backgroundElectrotechnics/Electrical Engineering, Physics, Nanoscience & NanotechnologySupervising scientist(s)For further information or for application, please contact: Alexander Grill (Alexander.Grill@imec.be) and Ruben Asanovski (Ruben.Asanovski@imec.be)Imec allowance will be provided.
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Accueil > Emploi > TCAD Simulations of State-Of-The-Art CMOS Devices at Cryogenic Temperatures

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